The Optics Laboratory
Group of Hans Hallen, Physics Department, North Carolina State University

Excess Carrier Lifetime: Quantitative Measurement at High Spatial Resolution

The lifetime of excess carriers, carriers created by shining light on a semiconductor, is modified by the presence of defects. These defects may be buried under the surface or be defects in the surface termination. We image this process at high spatial resolution, establish that the method can be quantitative, examine the origins of the high resolution, and discuss other properties in relation to silicon-on-insulator samples. [1] [2] [3] [4] [5] [6]

 Experimental Technique



 Spatial Resolution

 Other Effects, SOI

  • [1] A.H. La Rosa, B.I. Yakobson and H.D. Hallen, "Optical imaging of carrier dynamics in silicon with subwavelength resolution," Applied Physics Letters 70, 1656 - 1658, 1997 [online]. [local preprint]
  • [2] H.D. Hallen, A.H. La Rosa and C.L. Jahncke, "Near-field scanning optical microscopy and spectroscopy for semiconductor characterization," Physica Status Solidi (A) Applied Research 152, 257 - 268, 1995 [online]. [local preprint]
  • [3] Andres H. La Rosa, Catherine L. Jahncke and Hans D. Hallen, "Time-resolved contrast in near-field scanning optical microscopy of semiconductors," SPIE 2384, pp. 101-108, 1995 [online], -- An invited paper. [local preprint]
  • [4] A.H. La Rosa, B.I. Yakobson and H.D. Hallen, "Imaging of silicon carrier dynamics with near-field scanning optical microscopy," in Materials Research Society Symposium - Proceedings, Boston, MA, USA 406, pp. 189 - 194, 1996 [online]. [local preprint]
  • [5]H. D. Hallen and A. H. La Rosa, "Near-Field Scanning Optical Microscopy as an Imaging Tool for Silicon Carrier Processes," in Proc. of International Conference on Silicon Dielectric Interfaces, Research Triangle Park, NC, February, 2000. [local preprint]
  • [6] A. LaRosa, C.L. Jahncke and H.D. Hallen, "Time as a contrast mechanism in near-field imaging," Ultramicroscopy 57, 303 - 308, 1995 [online]. [local preprint]
  •  More info is in the papers.

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