Gerald Lucovsky

Professor Specializes in Nanoscience/Materials and Biomolecular Simulations

Contact Information Physics Department NC State University Box 8202 Raleigh, NC 27695 Work Address: 406E Cox Phone: (919) 515-3301 Fax: (919) 515-6538

Areas of Interest My primary research activities are in the deposition of thin film electronic materials using remote plasma enhanced chemical vapor deposition. Materials being studied include: (a) silicon oxide, (b) silicon nitride, (c) silicon oxynitride, (d) amorphous, microcrystalline silicon and crystalline Si, (e) amorphous and microcrystalline Si alloys and (f) crystalline GaN and GaP. A second area of research deals with studies of the properties of thermally grown silicon dioxide and comparisons with plasma deposited oxides. These programs couple basic studies of materials synthesis and characterization with device applications. Recent Publications "Structure of Ultrathin SiO2/Si(111) Interfaces Studied by Photoelectron Spectroscopy," J. Vac. Sci. Tech. A17. J. W. Keister, J. E. Rowe, J. J. Kolodziej, H. Niimi, H.-S. Tao, T. E. Madey and G. Lucovsky. (1999). p. 1250-1257. "Band Offsets for Ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from Photoemission Spectroscopy," J. Vac. Sci. Tech. B17. J. W. Keister, J. E. Rowe, J. J. Kolodziej, H. Niimi, T. E. Madey and G. Lucovsky. (1999). p. 1831-1835. "The Effects of Interfacial Suboxide Transition Regions on Direct Tunneling in Oxide and Stacked Oxide-Nitride Gate Dielectrics," Microelectronic Engineering 48(1-4). H. Yang, H. Niimi, Y. Wu, G. Lucovsky, J. W. Keister and J. E. Rowe. (1999). p. 307-310. "Formation of MIS Devices with Oxide-Nitride-Oxide Dielectrics by Low-temperature Plasma-assisted Processing and High- temperature Rapid Thermal Annealing," J. Vac. Sci. Tech. . G. Lucovsky. "Epitaxial Growth of GaP by Remote Plasma-Enhanced Chemical-Vapor Deposition, RPECVD," J. Vac. Sci. Technol. A11. S.W. Choi, K.J. Bachmann and G. Lucovsky. (1993). p. 326. "Femtosecond Spectroscopic Study of Ultrafast Carrier Relaxation in Hydrogenated Amorphous Silicon a-Si:H," J. Appl. Phys. 73. A. Esser, H. Heesel H. Kurz, C. Wang, G.N. Parsons and G. Lucovsky. (1993). p. 1235. "Transport Properties of Optically-Generated Free Carriers in Amorphous Silicon, a-Si:H in the Femtosecond Time Regime," Phys. Rev. B47. A. Esser, H. Heesel H. Kurz, C. Wang, G.N. Parsons and G. Lucovsky. (1993). p. 3593. "New approach to preparing smooth Si(100) surfaces: Characterization by spectroellipsometry and validation of Si/SiO2 interface properties in metal-oxide-semiconductor devices," J. Vac. Sci. Technol. (in press). D. Schmidt, H. Niimi, B. J. Hinds, D. E. Aspnes, and G. Lucovsky. "Linear and nonlinear optical studies of absorption processes at Si-SiO2 interfaces on vicinal Si(111) wafers," The Physics of Semiconductors. G. Lucovsky, T. Yasuda, L. Mantese, G. Powell, D. E. Aspnes, S. V. Hattangady, D. R. Lee, V. Misa, J. J. Wortman, U. Emmerichs, C. Meyer, H. Bakker, and H. Kurz. World Scientific, Singapore, edited by D.J. Lockwood. (1995). p. 604-607. "Effects of Pre-Deposition Processing on the Electrical Properties of SiO2/Si Structures Formed by Low-Temperature, Plasma-Assisted Oxidation and Deposition Process," J. Vac. Sci. Technol. A11. T. Yasuda, Y. Ma. Y.L. Chen, G. Lucovsky. (1993). p. 945.