Areas of Interest
Prof. Aspnes heads the Real-Time Diagnostics and Control Laboratory, and has published over 300 papers with primary emphases in the areas of optical spectroscopy and of semiconductor and surface physics. Contributions include the discovery, elucidation, and development of low-field electroreflectance for high-resolution spectroscopy of semiconductors and the determination of their band structures, the development and application of spectroscopic ellipsometry to the analysis of surfaces, interfaces, thin films, and bulk materials, and the development and application of reflectance-difference spectroscopy for the real-time analysis of epitaxial growth. Current research activities are directed toward nondestructive analysis of surfaces, interfaces, and bulk materials, including properties of GaN, high precision determination of energy band critical points by reciprocal space analysis, properties of Si surfaces and interfaces, propagation of short optical pulses, and the development of experimental and theoretical methods of realizing real-time diagnostics and control of semiconductor epitaxy by organometallic chemical vapor deposition.
Recent Publications
"Real-time optical analysis and control of semiconductor epitaxy: progress and opportunity (Isakson Prize lecture),"
Solid State Communications.
101.
D. E. Aspnes.
(1997). p. 85-92.
"Photon-induced localization and final-state correlation effects in optically absorbing materials,"
J. Vac. Sci. Technol..
B16.
D. E. Aspnes, L. Mantese, K. A. Bell, and U. Rossow.
(1998). p. 2367-72.
"Photon-induced localization in optically absorbing materials,"
Phys. Lett..
A253.
L. Mantese, K. A. Bell, D. E. Aspnes, and U. Rossow.
(1999). p. 93-97.
"Real-time assessment of selceted surface preparation regimens for 4H-SiC surfaces,"
Surface Science Lett.
464.
N. V. Edwards, K. Jarrendahl, K. Robbie, G. D. Powell, D. E. Aspnes, C. Cobet, N. Esser, W. Richter, and L. D. Madsen.
(2000). p. L703.
"Detection and analysis of depolarization artifacts in rotating-compensator polarimeters,"
J. Opt. Soc. Am..
A18.
S. Li, J. Opsal, H. Chu, and D. E. Aspnes.
(2001). p. 426-34.
"Elimination of endpoint-discontinuity artifacts in the analytsis of spectra in reciprocal space,"
Journal of Applied Physics.
89.
S. D. Yoo and D. E. Aspnes.
(2001). p. 8183-92.
"Ordinary and extraordinary dielectric functions of 4H- and 6H-SiC from 3.5 to 9.0 eV,"
Applied Physics Letters.
78.
O. P. A. Lindquist, K. Jarrendahl, S. Peters, J. T. Zettler, C. Cobet, N. Esser, D. E. Aspnes, A. Henry, and N. V. Edwards.
(2001). p. 2715-7.
"Investigation and control of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy,"
physica status solidi.
(a) 184.
M. Ebert, K. A. Bell, K. Flock, and D. E. Aspnes.
(2001). p. 79-87.
"Simplified bond-hyperpolarizability model of second harmonic generation,"
Physical Review.
B65.
G. D. Powell, J.-F. Wang, and D. E. Aspnes.
(2002). p. 205320:1-6.
"Simplified bond-hyperpolarizability model of second harmonic generation: application to Si-dielectric interfaces,"
J. Vac. Sci. Technol..
B20.
J.-F. T. Wang, G. D. Powell, R. S. Johnson, G. Lucovsky, and D. E. Aspnes.
(2002). p. 1699-705.
Click here to view a larger list of publications.
|
