The Optics Laboratory
Group ofHans Hallen, North Carolina State University Physics Department
Excess Carrier Lifetime: Quantitative Measurement at High Spatial Resolution
The lifetime of excess carriers, carriers created by shining light on a semiconductor, is modified by the presence of defects. These defects may be buried under the surface or be defects in the surface termination. We image this process at high spatial resolution, establish that the method can be quantitative, examine the origins of the high resolution, and discuss other properties in relation to silicon-on-insulator samples.
Other Effects, SOI
More info is in the papers.
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Last updated on October 5, 2000