Bilal Gökce

Professional Biography:

I attended RWTH Aachen University in Germany for my undergraduate and graduate studies. After writing my Diplom thesis at Fraunhofer Institute for Laser Technology I earned a Diplom degree (equivalent to Master of Science) in Physics in October 2008. Following my graduation, I worked as a research associate at the Fraunhofer Institute for Laser Technology.

January 2009 I started conducting research in nonlinear optical spectroscopy at North Carolina State University with Dr. Kenan Gundogdu and Dr. David E. Aspnes. September 2012 I earned my Ph.D. degree in Physics.

Research Interests:

Nonlinear optical spectroscopy, material characterization, Silicon technology, Laser technology

Publications:

7. "Effect of p-type doping on the oxidation of H–Si(111) studied by second-harmonic generation"
Bilal Gokce, Daniel B. Dougherty, Kenan Gundogdu
J. Vac. Sci. Technol. A 30, 040603 (2012)

6. "Control of the Oxidation Kinetics of H-terminated (111)Si by Using the
Carrier Concentration and the Strain: a Second-harmonic-generation
Investigation"

Bilal Gokce, Kenan Gundogdu, David E. Aspnes
J. Korean Phys. Soc. 60, 1685 (2012) (invited article)

5. "Effect of strain on bond-specific reaction kinetics during the oxidation of Hydrogen terminated (111) Si"
Bilal Gokce, David E. Aspnes, Kenan Gundogdu
Applied Physics Letters 98, 121912 (2011)

4. "Bond-specific evolution of oxidation of H-terminated (111)Si measured by
second-harmonic generation
"
Bilal Gokce, Eric J. Adles, David E. Aspnes, Kenan Gundogdu
Physics of Semiconductors AIP Conf. Proc. 1399, 193 (2011)

3. "Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping"
Bilal Gokce, David E. Aspnes, Gerald Lucovsky, Kenan Gundogdu
Applied Physics Letters 98, 021904 (2011)

2. "Back-reflection second-harmonic generation of (111) Si using focused,
Gaussian beams: theory and experiment
"
Bilal Gokce, Kenan Gundogdu, Eric J. Adles, David E. Aspnes
J. Korean Phys. Soc. 58, 1237 (2011) (invited lead article)

1. "Measurement and control of in-plane surface chemistry during the oxidation of
H-terminated (111) Si
"
Bilal Gokce, Eric J. Adles, David E. Aspnes, Kenan Gundogdu
PNAS 107, 17503–17508 (2010)
also featured on PhysOrg.com

Conference Presentations - Abstracts:

7. "Bond‐Specific Reaction Kinetics of Oxidation of (111) Si Studied by Second Harmonic Generation
Bilal Gokce, David E. Aspnes, Kenan Gundogdu
Optics of Surfaces and Interfaces (OSI9)
September 19-23, 2011, Akumal, Mexico

6. "Control of oxidation kinetics of H-terminated (111) Si by carrier concentration and strain
Bilal Gokce, Kenan Gundogdu, David E. Aspnes
Intl. Symposium on the Physics of Semiconductors and Applications (ISPSA-XV)
July 5-8, 2011, Jeju, Korea

5. "Real-time observation of bond-by-bond interface formation during oxidation of H-terminated (111) Si by second-harmonic generation
Bilal Gokce, Eric J. Adles, David E. Aspnes, Kenan Gundogdu
APS March Meeting 2011 (APS)
March 21-25, 2011, Dallas, TX, USA

4. "Observation and control of bond-by-bond interface formation during the oxidation of H-terminated (111)Si by second-harmonic generation"
Bilal Gokce, David E. Aspnes, Eric J. Adles, Kenan Gundogdu
14th Annual Southeast Ultrafast Conference (SEUFC)
January 13-14, 2011, Oak Ridge, TN, USA

3. “Bond-specific evolution of oxidation of H-terminated (111) Si measured by
second-harmonic generation”
Bilal Gokce, David E. Aspnes, Eric J. Adles, Kenan Gundogdu
30th International Conference on the Physics of Semiconductors (ICPS),
July 25-30, 2010, Seoul, Korea

2. “Observation of bond-by-bond interface formation during the oxidation of (111)Si”
Kenan Gundogdu, Bilal Gokce, David E. Aspnes, Eric J. Adles
5th International Conference on Spectroscopic Ellipsometry (ICSE),
May 23-28, 2010, Albany, NY, USA

1. “Observation of Realtime Oxidation of Si(111) Surfaces using Second Harmonic Generation”
Kenan Gundogdu, Bilal Gokce, Eric J. Adles, David E. Aspnes
American Vacuum Society 56th International Symposium (AVS),
November 8-9, 2009, San Jose, CA, USA

In the News:

"Technique allows researchers to examine how materials bond at the atomic level" PhysOrg.com, Eurekalert, ScienceDaily

"Bilal Gokce wins poster award"
NC state Physics Department News

Patents:

“Engineering of Chemical Reaction Rates by In-plane Uniaxial Stress”
Bilal Gokce, David E. Aspnes, Kenan Gundogdu
patent pending

Thesis:

"Einfluss der Leistungsdichteverteilung der Laserstrahlung beim Laserpolieren"
Bilal Gokce
Diplom Thesis at Fraunhofer Institute for Laser Technology (2008)

Honors and Awards:

Best poster award for best poster among 30 poster presentations about nonlinear optics at the 14th Annual Southeast Ultrafast Conference (SEUFC) 2011
Oak Ridge, TN, 2011

Travel award for 14th Annual Southeast Ultrafast Conference (SEUFC) 2011
Oak Ridge, TN, 2011

North Carolina State University Provost’s Fellowship for outstanding entering doctoral students, 2009

Contact Us

Bilal Gökce

Physics Department
NC State University
Box 8202
Raleigh, NC 27695
USA

Work Address:
1009 Capability Drive
Research Building II
Room 100A
Raleigh, NC 27606

Phone:
1-919-515-1974

Fax:
1-919-515- 6538

Email ContactEmail Contact:
bgokce@ncsu.edu